响应度
材料科学
钙钛矿(结构)
光电子学
光电探测器
异质结
紫外线
比探测率
宽带
锡
光电二极管
光学
化学工程
物理
工程类
冶金
作者
Hok‐Leung Loi,Jiangwei Cao,Chun Ki Liu,Yan Xu,Guijun Li,Feng Yan
出处
期刊:Small
[Wiley]
日期:2022-11-21
卷期号:19 (3)
被引量:3
标识
DOI:10.1002/smll.202205976
摘要
Abstract Highly sensitive broadband photodetectors are critical to numerous cutting‐edge technologies such as biomedical imaging, environment monitoring, and night vision. Here, phototransistors based on mixed Sn/Pb perovskites are reported, which demonstrate ultrahigh responsivity, gain and specific detectivity in a broadband from ultraviolet to near‐infrared region. The interface properties of the perovskite phototransistors are optimized by a special three‐step cleaning‐healing‐cleaning treatment, leading to a high hole mobility in the channel. The highly sensitive performance of the mixed Sn/Pb perovskite phototransistors can be attributed to the vertical compositional heterojunction automatically formed during the film deposition, which is helpful for the separation of photocarriers thereby enhancing a photogating effect in the perovskite channel. This work demonstrates a convenient approach to achieving high‐performance phototransistors through tuning compositional gradient in mixed‐metal perovskite channels.
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