有效辐射功率
宽带
电气工程
物理
带宽(计算)
CMOS芯片
波束宽度
天线(收音机)
光学
计算机科学
电子工程
电信
工程类
作者
Jiapeng Wan,Sanming Hu,Yizhu Shen,Yifan Ding,Akanksha Bhutani,Thomas Zwick,Teng Li
标识
DOI:10.1109/tap.2024.3371685
摘要
This article presents a high-integrated, wideband, multifeed, active antenna with in-antenna power combining for D-band applications. The proposed design consists of an active section and a passive section. In the active section, differential power amplifiers (PAs) are integrated with zero-degree transmission line for power dividing. The passive section includes a differential surface-mounted dielectric resonator (DR) with high-order mode to enhance on-chip radiation. The utilization of this novel in-antenna power combining technique disrupts the conventional 50- $\Omega $ matching rule, while concurrently incorporating surface-mounted DR technology. These two approaches synergistically facilitate the achievement of wideband performance, compact size, low loss, and high integration. Measurements demonstrate an antenna gain of 4.4 dBi, a 3-dB beamwidth of 60°, an effective isotropic radiated power (EIRP) of 15 dBm at 134 GHz, and a 3-dB EIRP bandwidth of 115–151 GHz. To the best of the authors' knowledge, the novel D-band complementary metal-oxide-semiconductor (CMOS) active antenna achieves the widest 3-dB EIRP bandwidth and the highest EIRP per element.
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