Evaporable Fullerene Indanones with Controlled Amorphous Morphology as Electron Transport Layers for Inverted Perovskite Solar Cells

富勒烯 化学 部分 钙钛矿(结构) 热稳定性 无定形固体 能量转换效率 纳米技术 化学工程 材料科学 光电子学 有机化学 工程类
作者
Qing-Jun Shui,Shiqi Shan,Yong-Chang Zhai,Shinobu Aoyagi,Seiichiro Izawa,Miftakhul Huda,Chu-Yang Yu,Lijian Zuo,Hongzheng Chen,Hao‐Sheng Lin,Yutaka Matsuo
出处
期刊:Journal of the American Chemical Society [American Chemical Society]
卷期号:145 (50): 27307-27315 被引量:17
标识
DOI:10.1021/jacs.3c07192
摘要

Fullerenes are among the most commonly used electron-transporting materials (ETMs) in inverted perovskite solar cells (IPSCs). Although versatile functionalized fullerene derivatives have shown excellent performance in IPSCs, pristine [60]fullerene (C60) is still the most widely used in devices mainly because of its uniform morphology by thermal deposition. However, thermally evaporable fullerene derivatives have not yet been achieved. Herein, we developed a series of evaporable fullerene derivatives, referred to as fullerene indanones (FIDOs), affording IPSCs with high power conversion efficiency (PCE) and long-term storage stability. The FIDOs were designed with a unique architecture in which the fullerene moiety and a benzene ring moiety are linked via a five-membered carbon ring in benzene ring plane. This molecular arrangement affords exceptional thermal stability, allowing the FIDOs to withstand harsh thermal deposition conditions. Moreover, by manipulating the steric bulk of the functional groups, we could control the state of the organic film from crystalline to amorphous. Subsequently, we used FIDOs as an electron transport layer (ETL) in IPSCs. Thanks to the suitable energy level and dual-passivation effect of FIDOs compared with a reference ETL using C60, the device using FIDOs achieved an open-circuit voltage of 1.16 V and a fill factor of 0.77. As a result, the PCE reached 22.11%, which is superior to 20.45% of the best-performing reference device. Most importantly, the FIDO-based IPSC devices exhibited exceptional stability in comparison to the reference device due to the stability of the amorphous ETL films.
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