薄脆饼
等离子体刻蚀
浅沟隔离
沟槽
插值(计算机图形学)
蚀刻(微加工)
材料科学
外推法
过程(计算)
半导体器件制造
等离子体
工艺优化
计算机科学
光电子学
纳米技术
机械工程
工程类
物理
数学
数学分析
图层(电子)
量子力学
操作系统
帧(网络)
环境工程
作者
Shuo Huang,Prem Panneerchelvam,Chad M. Huard,Shyam Sridhar,Peter L. G. Ventzek,Mark D. Smith
出处
期刊:Journal of vacuum science & technology
[American Vacuum Society]
日期:2023-08-04
卷期号:41 (5)
摘要
The critical dimensions of advanced semiconductor manufacturing processes have decreased to a few tens of nanometers while the aspect ratios have increased beyond 100. The performance of plasma etch patterning processes as well as the cost and time of the development cycle are critical to the success of ramping a new technology node toward profitable high-volume manufacturing. In this paper, a computational patterning software, ProETCH®, has been developed with rigorous physics and advanced algorithms for modeling the etch patterning process, with the featured capabilities in calibrating the reaction mechanisms and optimizing the etch process. A shallow trench isolation etch process using self-aligned double patterning was investigated. A reaction mechanism of silicon etch by Ar/Cl2 plasma was developed to address the surface reactions, and a plasma hypermodel was introduced to correlate process operating conditions to plasma parameters at the wafer surface. The parameters of the reaction mechanism and the plasma hypermodel were calibrated with experimental data obtained from cross-sectional scanning electron microscope (XSEM) images. The calibrated model is used to identify the different fundamental pathways that contribute to the observed profile metrics in XSEMs. The model was then used for process development and optimization by solving the forward and inverse problems. In the forward problem, the model is used to predict the etching profile at different process conditions. Predictions for both interpolation conditions (process parameters within the range used for developing the model) and extrapolation conditions (process parameters outside of the range used for developing the model) agree well with the experimental data with the root mean square error less than 4 nm (1 nm resolution used for the mesh). In the inverse problem, the developed model is used to search for process conditions (e.g., values of bias power and pressure), which could result in desirable profiles. The solutions to the inverse problem demonstrate a degeneracy in process space of the etching process for a given target profile.
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