EMIB Packages Simulation for Heterogeneous Integration of GaN and Si High-Power Devices

Serving as a high-bandwidth, low-latency, and low-power solution for die-to-die communication, Embedded Multi-die Interconnect Bridge (EMIB) enables selective high-density electrical connections between heterogeneous dices in the same package. In this paper, a three-dimensional finite element model of an EMIB package is developed for the heterogeneous integration of GaN and Si high-power chips. ANSYS simulation software is used and the model is analyzed for its thermal dissipation under forced air cooling condition. For the electrical properties, the experimental design variables are stack position, line width, line spacing, and substrate materials with different dielectric constants to investigate their effect on crosstalk and insertion loss. Also, characterized by the eye diagram quality, impact of trace length on signal transmission is researched, which helps optimize the location of two heterogeneous chips for thermal management. According to the simulation results, under the condition of ensuring enough height of eye diagram (0.6Vpp), the temperature of GaN chip can be controlled within 124.8 $^\circ \mathrm{C}$, and the temperature of silicon chip within $45.4^{\mathrm{o}}\mathrm{C}$, both of which have power density of 166 $\text{GW}/\mathrm{m}^{3}$ and 13 $\text{GW}/\mathrm{m}^{3}$, respectively.