A GaN‐on‐SiC Millimeter‐Wave Low Noise Amplifier Using Hybrid‐Matching Technique for 5G n258 Applications

ABSTRACT This letter details the design and implementation of a millimeter‐wave (mm‐Wave) low noise amplifier (LNA) employing 150‐nm gallium nitride on silicon carbide (GaN‐on‐SiC) high electron mobility transistor technology, specifically tailored for fifth‐generation (5G) applications. The proposed GaN‐based LNA integrates a hybrid matching topology alongside a co‐design strategy, thereby optimizing the noise figure (NF) by minimizing interstage matching components. The fabricated LNA, spanning a total chip area of 2.3 × 1.4 mm², exhibits a linear gain in the range of 17.41–19.2 dB and maintains an NF within 2.32–3.06 dB. Additionally, commendable input/output return losses exceeding 7.5 dB are achieved across the 23–27.5 GHz, with the apparatus consuming approximately 150 mW.