Structural and electronic transformations of GeSe 2 glass under high pressures studied by X-ray absorption spectroscopy

吸收光谱法 吸收(声学) 光谱学 X射线光谱学 结晶学 材料科学 X射线光电子能谱 X射线 X射线吸收光谱法 分析化学(期刊) 化学 光学 核磁共振 物理 有机化学 复合材料 量子力学
作者
Yimin Mijiti,Murat Durandurdu,João Elias Figueiredo Soares Rodrigues,A. Trapananti,S. J. Rezvani,Angelika Dorothea Rosa,Olivier Mathon,Tetsuo Irifune,Andrea Di Cicco
出处
期刊:Proceedings of the National Academy of Sciences of the United States of America [Proceedings of the National Academy of Sciences]
卷期号:121 (14)
标识
DOI:10.1073/pnas.2318978121
摘要

Pressure-induced transformations in an archetypal chalcogenide glass (GeSe 2 ) have been investigated up to 157 GPa by X-ray absorption spectroscopy (XAS) and molecular dynamics (MD) simulations. Ge and Se K-edge XAS data allowed simultaneous tracking of the correlated local structural and electronic changes at both Ge and Se sites. Thanks to the simultaneous analysis of extended X-ray absorption fine structure (EXAFS) signals of both edges, reliable quantitative information about the evolution of the first neighbor Ge-Se distribution could be obtained. It also allowed to account for contributions of the Ge-Ge and Se-Se bond distributions (chemical disorder). The low-density to high-density amorphous-amorphous transformation was found to occur within 10 to 30 GPa pressure range, but the conversion from tetrahedral to octahedral coordination of the Ge sites is completed above 80 GPa. No convincing evidence of another high-density amorphous state with coordination number larger than six was found within the investigated pressure range. The number of short Ge-Ge and Se-Se “wrong” bonds was found to increase upon pressurization. Experimental XAS results are confirmed by MD simulations, indicating the increase of chemical disorder under high pressure.
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