Preparation and Energy Storage Properties of A-site La/Sr Co-doped PbZrO3 Thin Films

Antiferroelectric materials have been extensively studied in the field of dielectric energy storage due to the ultra-high power density.PbZrO3, as a prototype of antiferroelectric materials, has been one of the most studied antiferroelectric materials, and the research on methods to enhance the energy storage performance of lead zirconate-based materials is the focus of the current study.In this work, further improvement of the energy storage performance of PbZrO3-based antiferroelectric thin films was realized by further doping small-radius Sr 2+ into the A-site of the PZO perovskite structure on the basis of La 3+ -doped PZO.A series of antiferroelectric thin films of A-site La/Sr co-doped Pb0.94-xLa0.04SrxZrO3(Sr-PLZ-x,x = 0, 0.03, 0.06, 0.09, 0.12) were prepared by Sol-Gel method, and the effects of Sr 2+ doping on the crystal structure and electrical properties such as ferroelectricity, energy storage, and fatigue properties of Sr-PLZ-x antiferroelectric films were systematically investigated.The results show that with the doping of Sr 2+ , the lattice constants are gradually reduced, and the saturation polarization of the films first slightly increases and maintains, then gradually decreases.The tolerance factor of Sr-PLZ-x films reduced with increasing Sr 2+ content, and the antiferroelectricity of the films are enhanced.Both the switching field and the breakdown strength are increased, resulting in an 第*