材料科学
杂原子
兴奋剂
氟化物
相间
金属
掺杂剂
法拉第效率
箔法
阴极
无机化学
极化(电化学)
纳米技术
化学工程
光电子学
电极
复合材料
冶金
电化学
有机化学
物理化学
遗传学
工程类
生物
化学
戒指(化学)
作者
Shan Chen,Jialei Chen,Wei Wang,Xuelong Liao,Zhuo Chen,Tiantian Lu,Youzeng Li,Huan Wang
标识
DOI:10.1016/j.ensm.2024.103348
摘要
Interlayer protection can effectively suppress zinc (Zn) dendrite growth, but suffers from sluggish Zn2+ conduction and anti-corrosion instability, which causes high polarization and inferior reversibility, hindering the practical applications of Zn metal batteries. Herein, we propose a heteroatom-dopant strategy for atomically-level regulation of fluoride interlayer to synchronously circumvent the above two issues. With a facile growth-doping approach, uniform phosphorus-doped ZnF2 (P-ZnF2) layer is grown on the surface of Zn foil. Experimental characterizations and computational analyses both demonstrate the doping of P atoms into ZnF2 lattice not only accelerates Zn2+ conduction across the interlayer, but also enhances the interlayer stability for durable protection. Consequently, the P-ZnF2 layer realizes a high reversibility with an average Coulombic efficiency of 99.5% and an impressive lifespan over 4200 h in symmetric cell. More encouragingly, the superior kinetics of stable P-ZnF2 achieves outstanding stability under rather demanding conditions: stable cycling over 4000 cycles at an ultrahigh current density of 50 mA cm–2; 320 h of lifespan with 91% of Zn utilization rate; 650 h of prolonged cycling behavior at a high temperature of 60 °C. Furthermore, the assembled full cell corroborates the practical feasibility of P-ZnF2 layer, even under an ultrahigh mass loading of cathode.
科研通智能强力驱动
Strongly Powered by AbleSci AI