共栅
CMOS芯片
充电泵
电压
材料科学
电气工程
电流(流体)
光电子学
低压
电流镜
晶体管
电容器
工程类
放大器
作者
Chun-Chieh Chen,Nan-Ku Lu
标识
DOI:10.1109/ickii55100.2022.9983569
摘要
We propose an ultra-low current mismatch CMOS charge pump. With a cascode gain-boosting technique, the proposed charge pump obtains an ultra-high equivalent output resistance over a wide output-voltage range. A current mismatch between the discharging and charging current of less than 0.015 % has been simulated by using a 0.18-μm mixedsignal 1P6M 1.8-V CMOS process. The output current and the output voltage ranges of the proposed charge pump are 600 μA and 0.38−1.41 V, respectively.
科研通智能强力驱动
Strongly Powered by AbleSci AI