A proposed graded band gap channel (GBGC) MOSFET

In this paper we propose a MOSFET structure which limits the drawbacks of the traditional MOSFET. Moreover it is super-fast and can be operated in the GHz range. The suggested MOSFET is analyzed to prove its superior noise and high speed performance that makes it suitable to be used in GHz applications. The proposed MOSFET is realized by using the known MOSFET technology with a graded band gap channel (GBGC) in the longitudinal direction from the source to the drain with the greater band gap at the source side and the smaller one at the drain side. This graded band gap can be achieved by implanting atoms of a material which has a smaller band gap energy than silicon. The fractional ratio (/spl delta/) of the implanted atoms increases with the position x towards the drain.