密度泛函理论
电子能带结构
从头算
带隙
蜂巢
群(周期表)
材料科学
凝聚态物理
半导体
联轴节(管道)
振动
图层(电子)
电子结构
蜂窝结构
计算化学
化学
纳米技术
物理
光电子学
复合材料
量子力学
作者
Fatih Ersan,Ethem Aktürk,S. Çiraci
出处
期刊:Physical review
[American Physical Society]
日期:2016-12-14
卷期号:94 (24)
被引量:129
标识
DOI:10.1103/physrevb.94.245417
摘要
In addition to stable single-layer buckled honeycomb and washboard structures of group-V elements (or pnictogens P, As, Sb, and Bi) we show that these elements can also form two-dimensional, single-layer structures consisting of buckled square and octagon rings. An extensive analysis comprising the calculation of mechanical properties, vibration frequencies, and finite-temperature ab initio molecular dynamics confirms that these structures are dynamically and thermally stable and suitable for applications at room temperature and above. All these structures are semiconductors with a fundamental band gap, which is wide for P but decreases with increasing row number. The effect of the spin-orbit coupling decreases the band gap and is found to be crucial for Sb and Bi. These results are obtained from first-principles calculations based on density functional theory.
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