Influence of proton radiation on the minority carrier lifetime in midwave infrared InAs/InAsSb superlattices

Influence of proton radiation on the minority carrier lifetime and on carrier concentrations in InAs/InAsSb superlattices has been studied for radiation doses up to 300 krad. The lifetime decreased from 1.8 μs down to 430 ns as the dose was increased. A variation of the carrier concentration in the range 1–2 × 1015 with increasing radiation dose was observed. The lifetime drop was however mainly caused by added Shockley-Read-Hall defects in the material. The position of these Shockley-Read-Hall centers was estimated to ∼60 meV below the conduction band edge from comparison between calculated and measured temperature dependencies of the minority carrier lifetime.