抵抗
极紫外光刻
光刻胶
平版印刷术
足迹
纳米技术
材料科学
计算机科学
光电子学
地质学
古生物学
图层(电子)
摘要
We discuss here our revolutionary technique to both apply photo resist and develop latent images in photo resist using dry technologies instead of the existing wet spin coating and development that have been the standard over the last several decades. We will review the key advantages of dry resist processing over wet resist processing: stability, photo sensitivity, environmental footprint, and cost. This nascent technology has demonstrated best in class resist performance at leading edge design rules, breaks several long standing tradeoffs in EUV photoresist materials, and opens the door to a new world of innovations in EUV lithography patterning.
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