XPS data for sputter-cleaned In0.53Ga0.47As, GaAs, and InAs surfaces

Core level binding energies and Auger parameters were determined for In, Ga, and As in the three compounds In0.53Ga0.47As, GaAs, and InAs. The surfaces were cleaned by 1.5 keV Ar ion bombardment. Under this condition the radiation-induced defects are small. In the case of GaAs the Ga and As3d levels become comparable with available data for chemically cleaned surfaces. The high Ga deficiency of chemically cleaned In0.53Ga0.47As surfaces could not be observed. Sputter cleaned surfaces seem to be closer to the bulk composition.