Silicon carrier-depletion-based Mach-Zehnder and ring modulators with different doping patterns for telecommunication and optical interconnect

In this paper, we review our progress on carrier-depletion-based silicon modulator. The lateral and the interdigitated PN junctions are optimized and then compared systematically. The comparison helps us to choose a proper doping pattern for 40 Gbit/s modulation with MZ structure and travelling wave electrode. Ring modulators with both doping patterns are able to work at 10 Gbit/s with 0.5 V, driving voltage. We also reduce the size of ring modulator by utilizing an asymmetrical waveguide.