材料科学
等效串联电阻
接触电阻
光电子学
制作
硅
太阳能电池
微尺度化学
共发射极
晶体硅
硼硅酸盐玻璃
退火(玻璃)
量子隧道
能量转换效率
氧化物
钝化
发光
纳米技术
掺杂剂活化
电接点
形成气体
太阳能电池效率
光发射
薄板电阻
氢
扩展阻力剖面
电压
作者
Zhongshu Yang,Wei Wang,Anh Dinh Bui,Keqing Huang,Rabin Basnet,Kean Chern Fong,Sergey Rubanov,Yida Pan,Di Yan,James Bullock,AnYao Liu,Daniel Macdonald
出处
期刊:Small
[Wiley]
日期:2025-12-03
卷期号:22 (5): e09751-e09751
被引量:1
标识
DOI:10.1002/smll.202509751
摘要
Abstract In the fabrication of silicon solar cells, a light anneal step, performed at moderate temperatures under controlled illumination, is commonly employed after the firing step to promote hydrogen in‐diffusion. This process effectively passivates both bulk and surface defects, improving the open‐circuit voltage and power conversion efficiency of modern silicon solar cells, such as tunneling oxide passivating contact (TOPCon) cells. With the emergence of laser‐enhanced contact technologies, the timing of this light anneal becomes critical to fully harness its benefits. In this study, the impact of an additional light anneal applied after the laser‐enhanced contact process is investigated. This additional light anneal is found to cause a significant increase in series resistance, traced via luminescence imaging and contact resistance measurements to the interface between the metal and p + emitter region. Electrical measurements under varying bias and temperature conditions suggest that the series resistance increase is likely due to excessive hydrogen accumulation at the metal/silicon interface. The possible formation of a thicker glass layer is not observed by microscale characterization, although this possibility can not be ruled out either. These findings underscore the importance of positioning the laser‐enhanced contact process as the final step in the fabrication sequence for high‐efficiency TOPCon solar cells.
科研通智能强力驱动
Strongly Powered by AbleSci AI