神经形态工程学
光电子学
兴奋性突触后电位
抑制性突触后电位
材料科学
突触
计算机科学
记忆电阻器
突触后电位
突触后电流
铟
人工神经网络
神经科学
电子工程
晶体管
失真(音乐)
混乱
纳米技术
纳米电子学
保管人
光子学
硅
内存处理
人工智能
作者
Jin Wang,Xianwen Liu,Huiqin Zhao,Ting Zhi,Pengfei Shao,Yan Gu,Qing Cai,Yu Liu,Dunjun Chen,Junjun Xue
摘要
Optoelectronic synaptic devices show great promise for neuromorphic computing (NC), offering high-speed and energy-efficient information processing. This study explores the potential of indium gallium zinc oxide (IGZO) based optoelectronic synapses for applications in neuromorphic computing. A systematic analysis of excitatory postsynaptic currents and inhibitory postsynaptic currents was conducted, examining various optical parameters and electrical parameters, which integrates short-term memory and long-term memory mechanisms and highlights the device's capabilities for information storage and learning. The device mimics biological synaptic plasticity, as demonstrated by experimental data. An evaluation of image recognition on the Fashion-MNIST dataset, using a confusion matrix, resulted in a recognition rate of approximately 93% after 100 training epochs. This indicates the effectiveness of pattern recognition, showcasing the potential of IGZO optoelectronic synapses for high-precision neuromorphic computing.
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