光电子学
材料科学
钝化
光伏系统
光伏
建筑集成光伏
异质结
响应度
开路电压
透射率
薄膜
图层(电子)
光电探测器
电压
纳米技术
电气工程
工程类
作者
Naveen Kumar,Malkeshkumar Patel,Minjoon Park,Chaehwan Jeong,Sangho Kim
出处
期刊:ACS applied energy materials
[American Chemical Society]
日期:2023-06-03
卷期号:6 (12): 6496-6504
被引量:1
标识
DOI:10.1021/acsaem.3c00425
摘要
Photovoltaics (PV) would be more promising if light could generate electric power invisibly. This will endow more degrees of freedom to PV cells for wide-range deployment. Transparent photovoltaic (TPV) devices are the groundwork of the building-integrated photovoltaic (BIPV) systems that provide aesthetics to the buildings and solar energy convertor modules. TPV is adequate for the BIPV system of windows. Heterojunctions between p-type Cu2O and n-type ZnO have emerged as one of the most promising TPV devices. However, their inadequate transparency and a deficit of open-circuit voltage (VOC) and short-circuit current density (JSC) remained an open challenge. In this work, we have fabricated a thin Ga2O3 buffer layer embedded transparent ZnO/Cu2O heterojunction photovoltaic device, showing an average visible transmittance of more than 50%. The insertion of the Ga2O3 buffer layer remarkably increases the JSC and VOC to ∼860% and ∼41%, respectively. The TPV device also demonstrated a high JSC of 3.41 mA/cm2 under UV light. The Ga2O3 layer provides a graded conduction band alignment and passivates the interface by the field-effect passivation mechanism. The Ga2O3 buffer layer embedded device also demonstrated a broadband photodetection with remarkably high responsivity and detectivity of 250 mA/W and 5 × 1011 Jones at self-biased conditions.
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