硫化氢
兴奋剂
密度泛函理论
硫化物
材料科学
氢
计算机科学
物理
化学
光电子学
计算化学
硫黄
量子力学
冶金
作者
Zibo Li,Shiying Guo,Ying Wang,S. Yang,Jingguo Hu,Shengli Zhang
标识
DOI:10.1021/acsanm.4c04339
摘要
The efficient and rapid detection of toxic and combustible H2S released during industrial processes is extremely crucial. However, two-dimensional (2D) SnS2 shows a weak interaction with H2S, leading to difficult detection. In this work, we use density functional theory (DFT) calculations to modify the SnS2 monolayer by N, P, Ge, and Se doping and investigate the adsorption properties and gas-sensing mechanism of each doped SnS2. By analyzing the adsorption energy, charge density difference, band structure, and recovery time, we suggest that Ge and Se doping is detrimental to the detection of H2S. Significantly, N and P doping can efficiently strengthen the interaction between SnS2 and H2S and simultaneously maintain the physisorption with the adsorption energy of −0.60 eV and −0.64 eV, leading to a suitable recovery time (5.64 × 10–2 s and 1.20 × 10–2 s). The H2S@N and P-SnS2 systems exhibit significant band gap decreases (1.51 and 0.84 eV). Moreover, combined with nonequilibrium Green's function (NEGF) method, the simulation of current–voltage characteristics further reveals their high sensitivity, reaching nearly 100%. Hence, the DFT and NEGF calculations in this work provide an efficient doping strategy to make 2D SnS2 a highly reusable and sensitive gas sensor for the detection of H2S.
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