Identification Of Recovering Idss Failure Mode Via Novel Comprehensive Failure Analysis Technique For Mosfet Device

Failure analysis (FA) plays an important role in the semiconductor industry as the process technology and new packaging continuously improve. Device recovery is a growing challenge in the FA field. In this paper, a novel FA method is introduced using combination of electrical characteristics, a precise fault isolation and a Focused Ion Beam (FIB) together with mechanical cross section. By employing this technique, it helps to resolve the issue of failure recovery and efficiently identify the precise root cause of the failure mechanism. In the deficiency of proper FA steps perform on the recoverable drain to source leakage failure might have the tendency to miss the evidence and provide an impropriate FA result or conclusion. The conclusion can be misleading if the exact root cause is not properly addressed and corrected. The chance of failure reoccurrence is very high. Two separate investigations with varying failure mechanisms will discuss the above-mentioned techniques. Significant results of wafer related issue and foreign material issue were able to identify by applying this novel FA technique. In summary, this work introduces a novel comprehensive failure analysis that enables the identification of a device's failure mechanism. Hence, the device recovery issue is resolved, and the production team is equipped with a precise failure mechanism to investigate the cause of the failure.