锡
铁电性
材料科学
电极
结晶学
分析化学(期刊)
电介质
光电子学
冶金
化学
物理化学
色谱法
作者
Santosh Chiniwar,Ya‐Chen Hsieh,Ching-Hsiang Shih,Chih-Yu Teng,Jing-Tang Yang,Chenming Hu,Bi‐Hsuan Lin,Mau‐Tsu Tang,Yuan‐Chieh Tseng
出处
期刊:ACS applied electronic materials
[American Chemical Society]
日期:2024-02-13
标识
DOI:10.1021/acsaelm.3c01502
摘要
Hf1–xZxO2 (HZO) is a promising ferroelectric (FE) material with CMOS compatibility, while the TiN/HZO/W metal-ferroelectric-metal structure provides balanced thermal expansion for stacking. In this study, we developed a 7 nm film of HZO with a FE polarization (2Pr) value of ∼43 μC/cm2 and cycling endurance of 108 by determining the appropriate oxidation state for a W bottom electrode deposited via atomic layer deposition with a relatively low annealing temperature of 400 °C. To visualize FE uniformity, we used X-ray absorption spectroscopy phase mapping to construct a two-dimensional map of the orthorhombic (O), tetragonal (T), and monoclinic (M) phases of the HZO film. Subsequent orientation- and chemical-state-resolved X-ray analysis revealed that the enhanced FE polarization performance can be attributed to the combined effects of interface strain and oxygen vacancies. Piezoelectric force microscopy verified the switching uniformity of the devices and revealed the electrical characteristics for use in device optimization.
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