材料科学
记忆电阻器
制作
钙钛矿(结构)
光电子学
电压
质量(理念)
铅(地质)
薄膜
纳米技术
电子工程
电气工程
化学工程
工程类
地质学
地貌学
哲学
病理
认识论
医学
替代医学
作者
Xiaofang Zhang,Ke Wang,Zhenyu Li,Juanjuan Qi,Dongke Li,Jianqiang Luo,Jian Liu
标识
DOI:10.1088/1361-6528/ad2158
摘要
Recently, the lead-free double perovskite Cs2AgBiBr6 has been considered as a promising candidate for next-generation nonvolatile memory and artificial synapse devices due to its high stability and low toxicity compared to its lead-based counterparts. In this work, we developed a simple and effective method to produce high-quality lead-free double perovskite Cs2AgBiBr6 thin films without pinholes and particles by applying a low-pressure assisted (LPA) method under ambient condition with a relative humidity (RH) of about 45%. The formation of pinholes and Ag precipitation in the perovskite Cs2AgBiBr6 films is effectively suppressed by the proper ratio of N,N-dimenthylformamide (DMF) mixed in Dimethyl sulfoxide (DMSO) solvents. Furthermore, the grain size of the Cs2AgBiBr6 films can be significantly increased by increasing the post-annealing temperature. Finally, a sandwiched structure memristor with an ITO/Cs2AgBiBr6/Ta configuration was successfully demonstrated, featuring ultralow operation voltage (VSet ~57 23 mV, VReset ~ 692 68 mV) and satisfactory memory window (the ratio of RHRS/RLRS ~ 10 times), which makes it suitable for low-power consumption information storage devices.
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