硼
猝灭(荧光)
窄带
电致发光
氮气
光化学
光电子学
共振(粒子物理)
材料科学
有机发光二极管
化学
荧光
纳米技术
计算机科学
物理
电信
原子物理学
有机化学
光学
图层(电子)
作者
Zhuixing Xue,Zhengqi Xiao,Yang Zou,Zhanxiang Chen,Jiahui Liu,Zhongyan Huang,Chuluo Yang
摘要
Developing highly efficient deep-blue multi-resonance thermal activated delayed fluorescence (MR-TADF) materials for ultra-high-definition organic light-emitting diodes (OLEDs) displays that meet the stringent BT.2020 standard remains a significant challenge. In this study, we present a strategy to achieve high-performance deep-blue MR-TADF emitters by integrating a large π-conjugated double-boron-embedded MR skeleton with strategically positioned peripheral steric hindrance groups. The developed molecule, DMBNO, exhibits a narrow full-width at half maximum (FWHM) of 19 nm, with a deep-blue emission peak at 444 nm in diluted toluene solutions. Additionally, it achieves high photoluminescence quantum yield (PLQY) and a horizontal ratio of emitting dipole orientation (θ ∥) exceeding 90% in doped films. Notably, DMBNO demonstrates anti-quenching properties and effectively suppresses spectrum broadening. Consequently, OLEDs based on DMBNO achieve a high maximum external quantum efficiency (EQEmax) of 32.3%, with an impressive Commission Internationale de l'Eclairage (CIE) y-coordinate of 0.046, fully satisfying the BT.2020 blue gamut at a high doping concentration of 10 wt%. These findings offer valuable insights into molecular design tactics for deep-blue MR-TADF emitters featuring high efficiency, ultra-pure color, and anti-quenching characteristics.
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