Intrinsic Out‐Of‐Plane and In‐Plane Ferroelectricity in 2D AgCrS2 with High Curie Temperature (Adv. Mater. 50/2024)

2D Ferroelectric Memory In article number 2407655, Hua Xu and coworkers present a novel 2D ferroelectric material AgCrS2 synthesized by chemical vapor deposition growth. The 2D AgCrS2 crystal displays robust ferroelectric polarization in both in-plane and out-of-plane directions with strong intercorrelation and high Curie temperature (682 K). Consequently, the 2D AgCrS2 crystal is successfully utilized to construct ferroelectric memory device, demonstrating significant potential for advancing the development of future artificial intelligence (AI).