卤化物
钙钛矿(结构)
带隙
材料科学
铋
半导体
光电子学
激子
金属
凝聚态物理
化学
无机化学
结晶学
冶金
物理
作者
Long Zhang,Chunming Liu,Lingrui Wang,Cailong Liu,Kai Wang,Bo Zou
标识
DOI:10.1002/anie.201804310
摘要
Abstract Low‐toxicity, air‐stable bismuth‐based perovskite materials are attractive substitutes for lead halide perovskites in photovoltaic and optoelectronic devices. The structural, optical, and electrical property changes of zero‐dimensional perovskite Cs 3 Bi 2 I 9 resulting from lattice compression is presented. An emission enhancement under mild pressure is attributed to the increase in exciton binding energy. Unprecedented band gap narrowing originated from Bi−I bond contraction, and the decrease in bridging Bi‐I‐Bi angle enhances metal halide orbital overlap, thereby breaking through the Shockley–Queisser limit under relatively low pressure. Pressure‐induced structural evolutions correlate well with changes in optical properties, and the changes are reversible upon decompression. Considerable resistance reduction implies a semiconductor‐to‐conductor transition at ca. 28 GPa, and the final confirmed metallic character by electrical experiments indicates a wholly new electronic property.
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