材料科学
光电子学
晶体管
神经形态工程学
兴奋性突触后电位
突触后电流
并五苯
薄膜晶体管
纳米技术
计算机科学
神经科学
电气工程
人工神经网络
电压
工程类
机器学习
生物
图层(电子)
抑制性突触后电位
作者
Shilei Dai,Xiaohan Wu,Dapeng Liu,Yingli Chu,Kai Wang,Ben Yang,Jia Huang
标识
DOI:10.1021/acsami.8b05036
摘要
Synaptic transistors stimulated by light waves or photons may offer advantages to the devices, such as wide bandwidth, ultrafast signal transmission, and robustness. However, previously reported light-stimulated synaptic devices generally require special photoelectric properties from the semiconductors and sophisticated device's architectures. In this work, a simple and effective strategy for fabricating light-stimulated synaptic transistors is provided by utilizing interface charge trapping effect of organic field-effect transistors (OFETs). Significantly, our devices exhibited highly synapselike behaviors, such as excitatory postsynaptic current (EPSC) and pair-pulse facilitation (PPF), and presented memory and learning ability. The EPSC decay, PPF curves, and forgetting behavior can be well expressed by mathematical equations for synaptic devices, indicating that interfacial charge trapping effect of OFETs can be utilized as a reliable strategy to realize organic light-stimulated synapses. Therefore, this work provides a simple and effective strategy for fabricating light-stimulated synaptic transistors with both memory and learning ability, which enlightens a new direction for developing neuromorphic devices.
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