材料科学
铁电性
电介质
随时间变化的栅氧化层击穿
薄膜
介电强度
相(物质)
凝聚态物理
分析化学(期刊)
光电子学
电压
栅极电介质
电气工程
纳米技术
化学
晶体管
物理
有机化学
色谱法
工程类
作者
Xiaopeng Li,Wei Wei,Jixuan Wu,Lu Tai,Xuepeng Zhan,Weiqiang Zhang,Mingfeng Tang,Guoqing Zhao,Hao Xu,Junshuai Chai,Xiaolei Wang,Masaharu Kobayashi,Jiezhi Chen
标识
DOI:10.35848/1347-4065/ac8aea
摘要
Abstract A deep insight is aimed at into the degradation of ferroelectric thin film and, systematical time-dependent dielectric breakdown characterizations in sub-10 nm Hf 0.5 Zr 0.5 O 2 (HZO) film are performed and analyzed in this work. First, it is found that the anti-ferroelectric t-phase becomes more competitive when the film thickness decreases, and the wake-up effect is related to the phase transition. Second, the experimental phenomenon proves the correlation between soft breakdown and hard breakdown in the thin film, especially at low voltages. Furthermore, it is evident that a larger hard breakdown Weibull slope presents in thinner HZO film, showing the opposite trend to conventional dielectrics such as SiO 2 . The underlying mechanisms are discussed, and it is concluded that the t-phase interface layer, as well as the pre-existing defects in bulk film, are important factors for thin HZO-based devices.
科研通智能强力驱动
Strongly Powered by AbleSci AI