量子点
带隙
光电子学
材料科学
太阳能电池
光致发光
作者
Eleonora Cominato Weiner,R. Jakomin,Rudy M. S. Kawabata,L. D. Pinto,Bráulio S. Archanjo,M. P. Pires,P. L. Souza
标识
DOI:10.1088/1361-6463/ad0d2f
摘要
Abstract The In(Ga)As(P)/InGaP quantum dot (QD)system has been investigated for QD intermediate band solar cells. In order to obtain optical transition energies compatible with the ideal ones required for the device record performance, namely: 1.95 eV, 1.24 eV and 0.7 eV, first disordered InGaP with a bandgap of 1.91 eV as the barrier material has been obtained. Then InAs QDs nucleated at 490 °C, 1.32 MLs thick, covered by a 3–4 nm GaAs capping layer and In-flushed provided radiation emission in the energy interval between 1.15 eV and 1.35 eV, fully compatible with the ideal 1.24 eV. The 4 nm capped structures have been proven to exhibit a stronger PL emission at 1.24 eV. Nominal InAs QDs suffer a pronounced incorporation of Ga, a consequence of In/Ga intermixing at their capping layer and barrier interfaces. An As/P intermixing also takes place at the quantum dot—barrier interface. The encouraging results herald further improvement of QD intermediate band solar cell’s performance.
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