光电探测器
响应度
光电子学
材料科学
光探测
量子效率
量子点
碳纳米管
场效应晶体管
比探测率
光电二极管
电场
晶体管
纳米技术
电压
物理
量子力学
作者
Jianfu Han,Kai Huang,Xiaojia Su,Xiaofei Xiao,Xue-Min Gong,Haibin Wang,Juexian Cao
出处
期刊:ACS Nano
[American Chemical Society]
日期:2023-05-11
卷期号:17 (10): 9510-9520
被引量:6
标识
DOI:10.1021/acsnano.3c02064
摘要
PbS colloidal quantum dots (CQDs) are promising building block for developing the next-generation high-performance near-infrared (NIR) photodetector. However, due to the surface ligand isolation and surface defects, PbS CQDs usually suffer from low carrier mobility, which limits further optimization of PbS CQDs-based optoelectronic devices. Here, the combination of PbS CQD photodiode and carbon nanotube (CNT) film field-effect transistor (FET) achieves a transistorized NIR photodetector with a photosensitive gate. The photogenerated electrons are drifted to the dielectric surface by a negative gate electric field and built-in electric field, serving as an equivalent gate voltage to turn on the CNT FET, thus realizing the conversion of optical signals to electrical signals. The photodetector exhibits high performance, with a responsivity and detectivity of 41.9 A/W and 3.04 × 1011 Jones under 950 nm illumination, respectively. More importantly, the photodetector achieves an ultrahigh external quantum efficiency (EQE) of 5470% due to the CNT FET amplification function. Besides, the photodetector demonstrates a versatile photoresponse that allows for regulation of responsivity, detectivity, and EQE over a wide range through gate voltage control. The photodetector shows immense potential in NIR photodetection applications, and the distinctive structure of the optical module and electrical module separation also provides fresh thinking for the research and development of the next generation of optoelectronic devices.
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