Effects of substrate orientation and oxygen partial pressure on the growth of Ga 2 O 3 films and the performance of solar-blind ultraviolet photodetectors
期刊:CrystEngComm [The Royal Society of Chemistry] 日期:2025-01-01卷期号:27 (43): 7038-7048
标识
DOI:10.1039/d5ce00788g
摘要
This work establishes guidelines for the growth of α-Ga 2 O 3 and β-Ga 2 O 3 by analyzing the effects of substrate orientation and PLD process parameters (oxygen partial pressure) on phase composition and performance.