High-efficiency small-pixel-size InGaN green micro-LED arrays using ion implantation pixelization

Micro-LEDs, especially small-size micro-LEDs, have attracted increasing attention for high-resolution displays and high-speed visible light communications in recent years. However, the efficiency of micro-LEDs sharply decreases with decreasing device size due to sidewall damage resulting from the mesa etching. Therefore, the implementation of a low-damage pixelization technique is essential for enhancing the performance of micro-LEDs. In this Letter, ion implantation (IIP) was employed to improve the performance of InGaN green micro-LED arrays with a pixel size of around 6.5 μm and a resolution of 25 × 25. The peak external quantum efficiency of the micro-LED array is enhanced to 6.2%, which is much higher than the 2.4% of that fabricated by conventional inductively coupled plasma etching. In addition, the transmission data rate of the IIP-pixelized micro-LED array is 2.7 times higher, increasing from 115.5 to 307.3 Mbps at an operating current density of about 100 A/cm2. Our work will promote the advancement of high-performance micro-LED applications.