Schottky barrier height modulation of Metal-WS2 contact by molecular doping technique

Determination of electrical transport property of the layered 2D TMDC material is fundamentally important to semiconductor device development. In this work the contact resistance ($\mathrm{R}_{\mathrm{c}}$) at the junction of 2D Tungsten Disulfide and metal has been investigated. The W$\mathrm{S}_{2}-$metal interface suffers from poor electrical conductivity due to the formation of sulfur vacancies during the exfoliation process. The reported work shows a tendency to reduce the $\mathrm{R}_{\mathrm{c}}$ and Schottky barrier height ofWS 2 after Cl doping. The conductivity of doped and undoped WS 2 thin films were studied and the $\mathrm{R}_{\mathrm{c}}$ value was extracted from Transfer length (TLM) method. A reduction in contact resistance from 0.34 k$\Omega$ to 0.15 k$\Omega$ and SBH from 1.02 eV to 0. SeV has been noticed after doping.