Effects of low fluence 212 MeV Ge swift heavy ion irradiation on the structural and optical properties of β-Ga2O3 epitaxial layers

Considering the future applications of the ultra-wide bandgap semiconductor β-Ga2O3 in high-performance electronic devices and aerospace, the effects of low fluence 212 MeV Ge swift heavy ion (SHI) irradiation on the structural and optical properties of β-Ga2O3 epitaxial layers have been studied in this work. The alternations in Raman scattering properties of the epitaxial layer after Ge SHI irradiation indicate the generation of lattice defects. The increased concentration of oxygen vacancies after irradiation leading to an enhanced area ratio of the yellow-red emission band in the PL spectrum of the β-Ga2O3 epitaxial layer. Simultaneously, the PL intensity quenches as the irradiation fluence increases, attributed to the generation of non-radiative recombination centers. Furthermore, HRTEM analysis provides direct evidence of lattice damage caused by 212 MeV Ge SHI irradiation to the samples. The results demonstrate that the spectral behaviors of β-Ga2O3 epitaxial layers can be modulated by low fluence Ge SHI irradiation with less damage caused to the overall crystalline quality and structure.