光探测
响应度
无定形固体
材料科学
溶胶凝胶
光电子学
光电探测器
纳米技术
化学
结晶学
作者
YuPeng Zhang,Ruiheng Zhou,Xinyan Li,Zhengyu Bi,Shengping Ruan,Yan Ma,Xin Li,Caixia Liu,Yu Chen,Jingran Zhou
出处
期刊:Sensors
[MDPI AG]
日期:2024-01-25
卷期号:24 (3): 787-787
摘要
β-Ga2O3 photodetectors have the advantages of low dark current and strong radiation resistance in UV detection. However, the limited photocurrent has restricted their applications. Herein, MSM UV photodetectors based on (InxGa1−x)2O3 (x = 0, 0.1, 0.2, 0.3) by a sol-gel method were fabricated and studied. The doping of indium ions in Ga2O3 leads to lattice distortion and promotes the formation of oxygen vacancies. The oxygen vacancies in (InxGa1−x)2O3 can be modulated by various proportions of indium, and the increased oxygen vacancies contribute to the enhancement of electron concentration. The results show that the amorphous In0.4Ga1.6O3 photodetector exhibited improved performances, including a high light-to-dark current ratio (2.8 × 103) and high responsivity (739.2 A/W). This work provides a promising semiconductor material In0.4Ga1.6O3 for high-performance MSM UV photodetectors.
科研通智能强力驱动
Strongly Powered by AbleSci AI