Atomic Layer Deposition of La2O3 Film with Precursor La(thd)3-DMEA

In this paper, a new precursor La(thd)3-DMEA (thd = 2,2,6,6-tetramethyl-3,5-heptanedione, DMEA = N,N′-dimethylethylenediamine) was synthesized and characterized with 1H-NMR and X-ray single crystal diffraction. The thermal properties of La(thd)3-DMEA were checked by thermogravimetric analysis (TGA), which confirmed that the volatility and suitability of La(thd)3-DMEA are suitable for atomic layer deposition (ALD). We studied the atomic layer deposition of La2O3 films on a SiO2 surface with La(thd)3-DMEA and O3 as precursors. Self-limiting deposition behaviors were found for the prepared films. The purity and surface morphology of the as-grown La2O3 films, which possessed a constant growth rate of ~0.4 Å/cycle at 250–280 °C, were confirmed by XPS, SEM, and AFM. The results show that La(thd)3-DMEA is a suitable precursor for the atomic layer deposition of La2O3 film.