In situ Raman monitoring of the growth of CVD diamond films

Abstract Raman spectroscopy was applied to monitor the growth of diamond in different plasma‐assisted chemical vapour deposition reactors. A gated, multichannel detection system was used to discriminate against the high level of background radiation produced by the plasma and the hot substrate. As a result, Raman spectra could be taken during diamond growth without interruption of the process. The ability to detect and distinguish between diamond and non‐diamond phases during film growth is demonstrated. A sufficient signal‐to‐noise ratio in the spectra was achieved for stress formation to be observed. Copyright © 2003 John Wiley & Sons, Ltd.