Preparation of AgInS2 quantum dot/In2S3 co-sensitized photoelectrodes by a facile aqueous-phase synthesis route and their photovoltaic performance

In an aqueous-phase system, AgInS2 quantum dot (QD) sensitized TiO2 photoanodes were prepared in situ by the reaction of β-In2S3 nanocrystals and as-prepared TiO2/Ag2S-QD electrodes, followed by a covering process with a ZnS passivation layer. A facile successive ionic layer adsorption and reaction (SILAR) method was adopted to obtain TiO2/Ag2S-QD electrodes. β-In2S3 nanocrystals synthesized by the chemical bath deposition (CBD) process serve as the reactant of AgInS2 as well as a buffer layer between the interfaces of TiO2 and AgInS2-QDs. A polysulfide electrolyte and a Pt-coated FTO glass count electrode were used to test the photovoltaic performance of the constructed devices. The characteristics of the sensitized photoelectrodes were studied in more detail by electron microscopy, X-ray techniques, and optical and photoelectric performance measurements. AgInS2 is the main photo-sensitizer for TiO2/AgInS2-QD/In2S3 electrodes and excess In2S3 appears on the surface of the electrodes. Based on the optimal Ag2S SILAR cycle, the best photovoltaic performance of the prepared TiO2/AgInS2-QD/In2S3 electrode with the short-circuit photocurrent density (Jsc) of 7.87 mA cm(-2) and power conversion efficiency (η) of 0.70% under full one-sun illumination was achieved.