Effect of Low-Energy Ga Ion Implantation on Selective Growth of Gallium Nitride Layer on Silicon Nitride Surfaces Using Metal Organic Chemical Vapor Deposition

Selective formation of GaN on a silicon nitride (SiN x ) surface by metal organic chemical vapor deposition (MOCVD) was investigated. Using a partly Ga + -implanted SiN x surface, selective growth of materials was confirmed in the Ga + -implanted region of the SiN x surface without using any masks during the MOCVD process. The surface roughness induced by Ga + implantation was found to be negligible from atomic force microscopy measurement results. From the confocal microscopy image analysis, X-ray diffraction measurement, and transmission electron microscopy observation results, it was found that the deposited material consists of polycrystalline hexagonal-GaN grains with a size of about 2 µm. A growth mechanism of GaN on the Ga + -implanted SiN x surface is proposed.