Asymmetric, nonbroadened waveguide structures for double QW high-power 808nm diode laser

In this paper, we propose an asymmetric epitaxial layer structre for designing 808nm diode laser. In this asymmetric sructure, the p-waveguide is reduced in thickness and the p-cladding is doped for increasing the thermal conductivity and consequently better heat extraction. The main purpose of using such design is enhancing the laser gain by reduction of loss in laser cavity, and reduction of electrical and thermal resistivity of the diode laser.