Applying a 3300V SiC Half-bridge to an MMC Based HVDC System

A 3.3 kV silicon carbide (SiC) MOSFET is analyzed for the use in a modular multilevel converter (MMC). A laboratory-setup of a submodule is built to characterize the switching behavior. The total losses are calculated for the MMC operation. A comparison to a silicon (Si) based IGBT model is made based on losses and the necessary semiconductor area.