Non-volatile multi-level cell storage via sequential phase transition in Sb7Te3/GeSb6Te multilayer thin film

Abstract For high-performance data centers, huge data transfer, reliable data storage and emerging in-memory computing require memory technology with the combination of accelerated access, large capacity and persistence. As for phase-change memory, the Sb-rich compounds Sb 7 Te 3 and GeSb 6 Te have demonstrated fast switching speed and considerable difference of phase transition temperature. A multilayer structure is built up with the two compounds to reach three non-volatile resistance states. Sequential phase transition in a relationship with the temperature is confirmed to contribute to different resistance states with sufficient thermal stability. With the verification of nanoscale confinement for the integration of Sb 7 Te 3 /GeSb 6 Te multilayer thin film, T-shape PCM cells are fabricated and two SET operations are executed with 40 ns-width pulses, exhibiting good potential for the multi-level PCM candidate.