Infrared photoconductor based on surface-state absorption in silicon

We report on a normal-incidence infrared photoconductor based on surface-state absorption in silicon, featuring broad-spectrum photoresponse, sensitivity of − 46 d B m enabled by lock-in readouts, CMOS-compatible fabrication process, and near transparency to incident light. Its applications in infrared imaging and measuring the beam profiles are demonstrated and presented. Future extension from this single-pixel element to a many-pixel camera is discussed.