谐振器
功勋
钪
凝聚态物理
耗散因子
材料科学
Q系数
联轴节(管道)
光电子学
物理
氮化物
压电
复合材料
电介质
冶金
图层(电子)
作者
Giovanni Esteves,Travis Ryan Young,Zichen Tang,Sean Yen,Todd Bauer,Michael David Henry,Roy H. Olsson
摘要
Aluminum scandium nitride (Al1−xScxN/AlScN) (x = 0.32) Lamb wave resonators (LWR) have been fabricated and tested to demonstrate electromechanical coupling coefficients (kt2) in excess of 10%. The resonators exhibited an average kt2 and unloaded quality factor (Qu) of 10.28% and 711, respectively, when calculated from the measured data. Applying the Butterworth Van-Dyke (BVD) model to the measured data enabled the extraction of the resonator's lumped element parameters to calculate the motional quality factor (Qm), which neglects the contributions of the electrical traces. For the best measured resonator response, results from the BVD model showed a Qm of 1184 and a resulting figure-of-merit (FOM = K2 · Qm) of 100. Comparing the response of similar AlScN and AlN resonators shows that the AlScN LWR has a significantly lower motional resistance (Rm), suggesting that AlScN has a strong potential for use in piezoelectric microelectromechanical oscillators.
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