Low Power MoS2/Nb2O5 Memtransistor Device with Highly Reliable Heterosynaptic Plasticity

Abstract Artificial synapses based on 2D MoS 2 memtransistors have recently attracted considerable attention as a promising device architecture for complex neuromorphic systems. However, previous memtransistor devices occasionally cause uncontrollable analog switching and unreliable synaptic plasticity due to random variations in the field‐induced defect migration. Herein, a highly reliable 2D MoS 2 /Nb 2 O 5 heterostructure memtransistor device is demonstrated, in which the Nb 2 O 5 interlayer thickness is a critical material parameter to induce and tune analog switching characteristics of the 2D MoS 2 . Ultraviolet photoelectron spectroscopy and photoluminescence analyses reveal that the Schottky barrier height at the 2D channel–electrode junction of the MoS 2 /Nb 2 O 5 heterostructure films is increased, leading to more effective contact barrier modulation and allowing more reliable resistive switching. The 2D/oxide memtransistors attain dual‐terminal (drain and gate) stimulated heterosynaptic plasticity and highly precise multi‐states. In addition, the memtransistor devices show an extremely low power consumption of ≈6 pJ and reliable potentiation/depression endurance characteristics over 2000 pulses. A high pattern recognition accuracy of ≈94.2% is finally achieved from the synaptic plasticity modulated by the drain pulse configuration using an image pattern recognition simulation. Thus, the novel 2D/oxide memtransistor makes a potential neuromorphic circuitry more flexible and energy‐efficient, promoting the development of more advanced neuromorphic systems.