Interaction Mechanism Between CGD and CDS Based on Space Competition and Optimization Method of Dynamic Characteristic for 600V Super-Junction VDMOS
计算机科学
物理
拓扑(电路)
组合数学
数学
作者
Ruidi Wang,Yibing Wang,Ming Qiao,Chao Zhang
标识
DOI:10.1109/ispsd49238.2022.9813645
摘要
A novel view of the interaction between C GD and C DS based on space competition is proposed in this paper. For small cell pitch super-junction vertical double-diffused MOSFET (SJ VDMOS), C GD and C DS have a close interaction in the center part of the depletion region. By changing the source-end structure, the electric field lines originally contributed to the C GD can be collected by the source end, thereby realizing the indirect modulation of the C GD . C GD and C DS present an opposite trend as one falling and the other rising. By this theory, we propose a SJ VDMOS with additional P-type implantation (API) based on a multi-epitaxy/multi-implant platform. Both simulated and experimental results validate the feasibility of reducing C GD with the easy-modified C DS . SJ VDMOS with API realizes a faster switching process, and the overshoot remains low while achieving BV > 600 V and a low R ON,SP of 11.35 mΩ∙cm 2 .