退火(玻璃)
薄膜
材料科学
色素敏化染料
介电谱
透射电子显微镜
太阳能电池
扫描电子显微镜
分析化学(期刊)
铟
光电子学
纳米技术
化学工程
电化学
化学
复合材料
电极
电解质
工程类
物理化学
色谱法
作者
Savisha Mahalingam,Huda Abdullah,Sahbudin Shaari,Andanastuti Muchtar,Izamarlina Asshari
摘要
Indium oxide (In2O3) thin films annealed at various annealing temperatures were prepared by using spin-coating method for dye-sensitized solar cells (DSSCs). The objective of this research is to enhance the photovoltaic conversion efficiency in In2O3 thin films by finding the optimum annealing temperature and also to study the reason for high and low performance in the annealed In2O3 thin films. The structural and morphological characteristics of In2O3 thin films were studied via XRD patterns, atomic force microscopy (AFM), field-emission scanning electron microscopy (FESEM), EDX sampling, and transmission electron microscopy (TEM). The annealing treatment modified the nanostructures of the In2O3 thin films viewed through FESEM images. The In2O3-450 °C-based DSSC exhibited better photovoltaic performance than the other annealed thin films of 1.54%. The electron properties were studied by electrochemical impedance spectroscopy (EIS) unit. The In2O3-450 °C thin films provide larger diffusion rate, low recombination effect, and longer electron lifetime, thus enhancing the performance of DSSC.
科研通智能强力驱动
Strongly Powered by AbleSci AI