Dopant Diffusion: Modeling and Technological Challenges

This chapter presents the general theory of diffusion in solids, applied to the case of semiconductors. Then, it takes a closer look at the case of dopants in silicon, from experimental and theoretical points of view. The chapter then describes some practical problems for the device realization. It presents a brief approach on germanium, a semiconductor which will probably be used in the upcoming technologies. The chapter emphasis on the need, for a proper model of dopant diffusion in silicon and for the optimization of junction engineering, to take into account increasingly complex couplings phenomena between dopant atoms and material point defects. Controlled Vocabulary Terms Semiconductor device doping