发光
材料科学
异质结
锌
光电子学
纳米技术
冶金
作者
F. Bertram,J. Christen
标识
DOI:10.12693/aphyspola.110.103
摘要
The optical properties of excitonic recombinations in ZnO are investigated by spatially and spectrally resolved cathodoluminescence measurements.The relevance of cathodoluminescence microscopy as a spatially resolved luminescence technique as a simple but very powerful characterization method is stressed out in discussions of a wide variety of appropriate examples.A thorough discussion of the various features of the cathodoluminescence of an undoped ZnO bulk crystal, epitaxially grown ZnO and MgZnO/ZnO/MgZnO quantum well structure is given.Particular attention is devoted to the impact of the internal electrical fields, e.g. the Franz-Keldysh effect in ZnO.Furthermore, this study focuses on the spectral variations as a function of depth to the interface in ZnO homo-and heterostructures.Our aim is to establish the nature of the optical transitions influenced by internal fields, defects and impurity doping in ZnO/GaN and ZnO/ZnO interfaces.This review covers also the vertical transport, diffusion and capture of carriers in a MgZnO/ZnO/MgZnO quantum well structure.
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