钝化
材料科学
化学计量学
蚀刻(微加工)
各向同性腐蚀
化学工程
冷凝
分析化学(期刊)
光电子学
纳米技术
冶金
图层(电子)
物理化学
热力学
化学
环境化学
工程类
物理
作者
Haibing Xie,Yudania Sánchez,Simón López‐Mariño,M. Espíndola-Rodríguez,Markus Neuschitzer,Diouldé Sylla,Andrew Fairbrother,Víctor Izquierdo‐Roca,A. Pérez-Rodrı́guez,Edgardo Saucedo
摘要
The control and removal of secondary phases is one of the major challenges for the development of Cu2ZnSn(S,Se)4 (CZTSSe)-based solar cells. Although etching processes have been developed for Cu(S,Se), Zn(S,Se), and CuSn(S,Se) secondary phases, so far very little attention has been given to the role of Sn(S,Se). In this paper, we report a chemical route using a yellow (NH4)2S solution to effectively remove Sn(S,Se). We found that Sn(S,Se) can form on the surface either because of stoichiometric deviation or by condensation. After etching, the efficiency of devices typically increases between 20 and 65% relative to the before etch efficiencies. We achieved a maximum 5.9% efficiency in Se-rich CZTSSe-based devices. It is confirmed that this feature is related not only to the removal of Sn(S,Se) but also to the unexpected passivation of the surface. We propose a phenomenological model for this passivation, which may open new perspectives for the development of CZTSSe-based solar cells.
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